www.vishay.com
VS-GB200TH120N
Vishay Semiconductors
Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C VCE(on) (typical) at IC = 200 A, 25 °C
Package
Circuit
1200 V 200 A 1.90 V Double INT-A-PAK Half bridge
FEATURES • Low VCE(on) SPT+ IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper
Bonding) technology • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS • UPS • Inverter for motor drive • AC and DC servo drive amplifier
DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
Collector current Pulsed collector current
IC ICM (1)
TC = 25 °C TC = 80 °C tp = 1 ms
Diode continuous forward current
IF TC = 80 °C
Diode maximum forward current
IFM tp = 1 ms
Maximum power dissipation
PD TJ = 150 °C
Short circuit withstand time
tSC TJ = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note (1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX. 1200 ± 20 360 200 400 200 400 1136
10 2500
UNITS V
A
W μs V
Revision: 03-Jul-14
1 Document Number: 94763
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-GB200TH120N
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage Collector cut-off current Gate to emitter leakage current
V(BR)CES
VCE(on)
VGE(th) ICES IGES
TJ = 25 °C VGE = 15 V, IC = 200 A, TJ = 25 °C VGE = 15 V, IC = 200 A, TJ = 125 °C VCE = VGE, IC = 8.0 mA, TJ = 25 °C VCE = VCES, VGE = 0 V, TJ = 25 °C VGE = VGES, VCE = 0 V, TJ = 25 °C
MIN. 1200
5.0 -
TYP. -
1.90 2.10 6.2
-
MAX. UNITS -
2.35 V
7.0 5.0 mA 400 nA
SWITCHING CHARACTERISTICS
PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Input capacitance Output capacitance Reverse transfer capacitance
SC data
Internal gate resistance Stray inductance Module lead resistance, terminal to chip
SYMBOL td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Coes Cres
ISC
Rgint LCE RCC’+EE’
TEST CONDITIONS
VCC = 600 V, IC = 200 A, Rg = 5.1 , VGE = ± 15 V, TJ = 25 °C
VCC = 600 V, IC = 200 A, Rg = 5.1 , VGE = ± 15 V, TJ = 125 °C
VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V
TC = 25 °C
MIN. -
-
-
TYP. 437 75 436 165 10.0 15.0 445 96 488 258 15.9 22.3 14.9 1.04 0.68
1200
1.0 0.35
MAX. UNITS ns mJ ns mJ - nF -
-A
- 20 nH - m
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Diode forward voltage Diode reverse recovery charge Diode peak reverse recovery current Diode reverse recovery energy
VF IF = 200 A
TJ = 25 °C TJ = 125 °C
TJ = 25 °C Qrr
TJ = 125 °C
Irr
IF = 200 A, VR = 600 V, dI/dt = - 2370 A/μs,
TJ = 25 °C
VGE = - 15 V
TJ = 125 °C
TJ = 25 °C Erec
TJ = 125 °C
MIN. -
TYP. 1.82 1.95 16.6 29.2 156 210 9.3 16.0
MAX. UNITS 2.25
V -
μC -
A -
mJ -
Revision: 03-Jul-14
2 Document Number: 94763
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IC (A)
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
TJ
Storage temperature range
TSTG
Junction to case
IGBT Diode
RthJC
Case to sink
RthCS
Conductive grease applied
Mounting torque
Power terminal screw: M6 Mounting screw: M6
Weight
VS-GB200TH120N
Vishay Semiconductors
MIN. TYP. MAX. UNITS
- - 150 °C
- 40 - 125
- - 0.11
- - 0.14 K/W
- 0.035 -
2.5 to 5.0 3.0 to 5.0
Nm
300 g
400
350
300
250 25 °C 200
125 °C 150
100
50 VGE = 15 V
0 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE (V) Fig. 1 - IGBT Typical Output Characteristics
400 350 VCE = 20 V
300
250 125 °C
200 25 °C 150
100
50 0 4 5 6 7 8 9 10 11 12 VGE (V.