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VS-GB200TH120N Dataheets PDF



Part Number VS-GB200TH120N
Manufacturers Vishay
Logo Vishay
Description Molding Type Module IGBT
Datasheet VS-GB200TH120N DatasheetVS-GB200TH120N Datasheet (PDF)

www.vishay.com VS-GB200TH120N Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 200 A, 25 °C Package Circuit 1200 V 200 A 1.90 V Double INT-A-PAK Half bridge FEATURES • Low VCE(on) SPT+ IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antipa.

  VS-GB200TH120N   VS-GB200TH120N


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www.vishay.com VS-GB200TH120N Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A Double INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 200 A, 25 °C Package Circuit 1200 V 200 A 1.90 V Double INT-A-PAK Half bridge FEATURES • Low VCE(on) SPT+ IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • UPS • Inverter for motor drive • AC and DC servo drive amplifier DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current Pulsed collector current IC ICM (1) TC = 25 °C TC = 80 °C tp = 1 ms Diode continuous forward current IF TC = 80 °C Diode maximum forward current IFM tp = 1 ms Maximum power dissipation PD TJ = 150 °C Short circuit withstand time tSC TJ = 125 °C RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: Pulse width limited by maximum junction temperature. MAX. 1200 ± 20 360 200 400 200 400 1136 10 2500 UNITS V A W μs V Revision: 03-Jul-14 1 Document Number: 94763 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-GB200TH120N Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter breakdown voltage Collector to emitter voltage Gate to emitter threshold voltage Collector cut-off current Gate to emitter leakage current V(BR)CES VCE(on) VGE(th) ICES IGES TJ = 25 °C VGE = 15 V, IC = 200 A, TJ = 25 °C VGE = 15 V, IC = 200 A, TJ = 125 °C VCE = VGE, IC = 8.0 mA, TJ = 25 °C VCE = VCES, VGE = 0 V, TJ = 25 °C VGE = VGES, VCE = 0 V, TJ = 25 °C MIN. 1200 5.0 - TYP. - 1.90 2.10 6.2 - MAX. UNITS - 2.35 V 7.0 5.0 mA 400 nA SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss Turn-off switching loss Input capacitance Output capacitance Reverse transfer capacitance SC data Internal gate resistance Stray inductance Module lead resistance, terminal to chip SYMBOL td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Coes Cres ISC Rgint LCE RCC’+EE’ TEST CONDITIONS VCC = 600 V, IC = 200 A, Rg = 5.1 , VGE = ± 15 V, TJ = 25 °C VCC = 600 V, IC = 200 A, Rg = 5.1 , VGE = ± 15 V, TJ = 125 °C VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc  10 μs, VGE = 15 V, TJ = 125 °C,  VCC = 900 V, VCEM  1200 V TC = 25 °C MIN. - - - TYP. 437 75 436 165 10.0 15.0 445 96 488 258 15.9 22.3 14.9 1.04 0.68 1200 1.0 0.35 MAX. UNITS ns mJ ns mJ - nF - -A - 20 nH - m DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Diode forward voltage Diode reverse recovery charge Diode peak reverse recovery current Diode reverse recovery energy VF IF = 200 A TJ = 25 °C TJ = 125 °C TJ = 25 °C Qrr TJ = 125 °C Irr IF = 200 A, VR = 600 V, dI/dt = - 2370 A/μs, TJ = 25 °C VGE = - 15 V TJ = 125 °C TJ = 25 °C Erec TJ = 125 °C MIN. - TYP. 1.82 1.95 16.6 29.2 156 210 9.3 16.0 MAX. UNITS 2.25 V - μC - A - mJ - Revision: 03-Jul-14 2 Document Number: 94763 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IC (A) www.vishay.com THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Operating junction temperature range TJ Storage temperature range TSTG Junction to case IGBT Diode RthJC Case to sink RthCS Conductive grease applied Mounting torque Power terminal screw: M6 Mounting screw: M6 Weight VS-GB200TH120N Vishay Semiconductors MIN. TYP. MAX. UNITS - - 150 °C - 40 - 125 - - 0.11 - - 0.14 K/W - 0.035 - 2.5 to 5.0 3.0 to 5.0 Nm 300 g 400 350 300 250 25 °C 200 125 °C 150 100 50 VGE = 15 V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE (V) Fig. 1 - IGBT Typical Output Characteristics 400 350 VCE = 20 V 300 250 125 °C 200 25 °C 150 100 50 0 4 5 6 7 8 9 10 11 12 VGE (V.


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