VS-GT400TH60N

www.vishay.com VS-GT400TH60N Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 400 A Dual INT-A-PAK FEATURES Low VCE(on) trench IGBT technology Low switching losses 5 μs short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 °C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VCES IC at TC = 80 °C VCE(on) (typical) at IC = 400 A, 25 °C Speed 600 V 400 A 1.60 V 8 kHz to 30 kHz Package Dual INT-A-PAK Circuit configuration Half bridge TYPICAL APPLICATIONS UPS Switching mode power supplies Electronic welders DESCRIPTION Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage Gate to emitter voltage Collector current Pulsed collector current Diode continuous forward current Diode maximum forward current Maximum power dissipation Short circuit withstand time I2t-value, diode RMS isolation voltage VCES VGES IC ICM (1) IF IFM PD tSC I2t VISOL TC = 25 °C TC = 80 °C tp = 1 ms TJ = 175 °C TJ = 125 °C VR = 0 V, t = 10 ms, TJ = 125 °C f = 50 Hz, t = 1 min No...