VS-20MT120UFAPbF

www.vishay.com VS-20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A MTP PRODUCT SUMMARY VCES IC at TC = 96 °C VCE(on) (typical) at IC = 20 A, 25 °C Package Circuit 1200 V 20 A 3.29 V MTP Full bridge FEATURES Ultrafast Non Punch Through (NPT) technology Positive VCE(on) temperature coefficient 10 μs short circuit capability HEXFRED® antiparallel diodes with ultrasoft reverse recovery Low diode VF Square RBSOA Al2O3 DBC substrate Very low stray inductance design for high speed operation UL approved file E78996 Speed 8 kHz to 60 kHz Designed and qualified for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Optimized for welding, UPS and SMPS applications Rugged with ultrafast performance Outstanding ZVS and hard switching operation Low EMI, requires less snubbing Excellent current sharing in parallel operation Direct mounting to heatsink PCB solderable terminals Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter breakdown voltage VCES Continuous collector current IC Pulsed collector current ICM Clamped inductive load current ILM Diode maximum forward current IFM Gate to emitter voltage VGE RMS isolation voltage VISOL Maximum power dissipation (only IGBT) PD Operating junction temperature range TJ TEST CONDITIONS TC = 96 °C Any terminal to case, t = 1 mi...