VS-GB50YF120N

www.vishay.com VS-GB50YF120N Vishay Semiconductors IGBT Fourpack Module, 50 A ECONO 2 PRIMARY CHARACTERISTICS VCES IC at TC = 66 °C VCE(on) (typical) Speed 1200 V 50 A 3.49 V 8 kHz to 30 kHz Package ECONO 2 Circuit configuration 4 pack FEATURES Square RBSOA HEXFRED® low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Benchmark efficiency for SMPS appreciation in particular HF welding Rugged transient performance Low EMI, requires less snubbing Direct mounting to heatsink space saving PCB solderable terminals Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current See fig. C.T.5 Clamped inductive load current ICM ILM Diode continuous forward current IF Diode maximum forward current Gate to emitter voltage IFM VGE Maximum power dissipation (IGBT) PD Maximum operating junction temperature Storage temperature range Isolation voltage TJ TStg VISOL TEST CONDITIONS TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C MAX. 1200 66 44 150 150 40 25 150 ± 20 330 180 150 -40 to +125 AC 2500 (min) UNITS V A V W °C V Revision: 20-Sep-17 1 Document Number: 93653 For techn...