IGBT
www.vishay.com
VS-GB50YF120N
Vishay Semiconductors
IGBT Fourpack Module, 50 A
ECONO 2
PRIMARY CHARACTERISTICS
VCES ...
Description
www.vishay.com
VS-GB50YF120N
Vishay Semiconductors
IGBT Fourpack Module, 50 A
ECONO 2
PRIMARY CHARACTERISTICS
VCES IC at TC = 66 °C VCE(on) (typical)
Speed
1200 V 50 A 3.49 V
8 kHz to 30 kHz
Package
ECONO 2
Circuit configuration
4 pack
FEATURES Square RBSOA HEXFRED® low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
BENEFITS Benchmark efficiency for SMPS appreciation in particular
HF welding Rugged transient performance Low EMI, requires less snubbing Direct mounting to heatsink space saving PCB solderable terminals Low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current See fig. C.T.5
Clamped inductive load current
ICM ILM
Diode continuous forward current
IF
Diode maximum forward current Gate to emitter voltage
IFM VGE
Maximum power dissipation (IGBT)
PD
Maximum operating junction temperature Storage temperature range Isolation voltage
TJ TStg VISOL
TEST CONDITIONS TC = 25 °C TC = 80 °C
TC = 25 °C TC = 80 °C
TC = 25 °C TC = 80 °C
MAX. 1200
66 44
150
150 40 25 150 ± 20 330 180 150 -40 to +125 AC 2500 (min)
UNITS V
A
V W °C V
Revision: 20-Sep-17
1 Document Number: 93653
For techn...
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