www.vishay.com
CPV362M4UPbF
Vishay Semiconductors
IGBT SIP Module (Fast IGBT)
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT ...
www.vishay.com
CPV362M4UPbF
Vishay Semiconductors
IGBT SIP Module (Fast IGBT)
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
IRMS per phase (3.1 kW total) with TC = 90 °C
TJ
Supply voltage
4.6 ARMS 125 °C 360 Vdc
Power factor
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical) at IC = 3.9 A, 25 °C
Package
1.7 V SIP
Circuit
Three Phase Inverter
FEATURES Fully isolated printed circuit board mount package
Switching-loss rating includes all “tail” losses HEXFRED® soft ultrafast diodes
Optimized for high speed over 5 kHz See fig. 1 for current vs. frequency curve
RoHS
COMPLIANT
UL approved file E78996
Designed and qualified for industrial level
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector to emitter voltage
SYMBOL VCES
Continuous collector current, each IGBT
IC
Pulsed collector current Cla...