www.vishay.com
CPV364M4KPbF
Vishay Semiconductors
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
IMS-2
PRODUCT...
www.vishay.com
CPV364M4KPbF
Vishay Semiconductors
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
IRMS per phase (3.1 kW total) with TC = 90 °C TJ
Supply voltage
Power factor
11 ARMS 125 °C 360 VDC
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical) at IC = 13 A, 25 °C
Package
1.8 V SIP
Circuit
Three Phase Inverter
FEATURES
Short circuit rated ultrafast: Optimized for high
speed > 5.0 kHz, and short circuit rated to 10 μs
at 125 °C, VGE = 15 V
RoHS
Fully isolated printed circuit board mount COMPLIANT
package
Switching-loss rating includes all “tail” losses
HEXFRED® soft ultrafast diodes
UL approved file E78996
Designed and qualified for industrial level
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector to emitter voltage
SYMBOL VCES
Cont...