VS-ENQ030L120S

www.vishay.com VS-ENQ030L120S Vishay Semiconductors EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A EMIPAK-1B (package example) FEATURES Ultrafast Trench IGBT technology HEXFRED® and silicon carbide diode technology PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Low internal inductances PressFit pins locking technology. Patent # US.263.820 B2 UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY TRENCH IGBT 1200 V STAGE VCES VCE(ON) typical at IC = 30 A 1200 V 2.12 V IC at TC = 102 °C 30 A TRENCH IGBT 600 V STAGE VCES VCE(ON) typical at IC = 30 A 600 V 1.42 V IC at TC = 106 °C Speed 30 A 8 kHz to 30 kHz Package EMIPAK-1B Circuit 3-levels neutral point clamp topology DESCRIPTION VS-ENQ030L120S is an integrated solution for a neutral point clamp topology in a single package. The EMIPAK-1B package is easy to use thanks to the PressFit pins and the exposed substrate provides improved thermal performance. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance.         ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Operating junction temperature Storage temperature range RMS isolation voltage Q1 - Q4 TRENCH IGBT 1200 V TJ TStg VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s Collector to emitter voltage VCES Gate to emitter voltage VGES P...