VS-ETL015Y120H

www.vishay.com VS-ETL015Y120H Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A EMIPAK-2B (package example) PRODUCT SUMMARY RECTIFIER BYPASS DIODE VRRM VFM typical at IF = 20 A IF at TC = 80 °C PFC IGBT 1200 V 1.04 V 62 A VCES 1200 V VCE(ON) typical at IC = 15 A IC at TC = 80 °C Speed (max.) 2.61 V 15 A 20 kHz Speed 8 kHz to 30 kHz Package EMIPAK-2B Circuit Double interleaved boost converter FEATURES Trench IGBT technology HEXFRED clamping diode technology Rectifier bypass diode PressFit pins technology Exposed Al2O3 substrate with low thermal resistance Integrated thermistor 10 μs short circuit capability Square RBSOA Low internal inductances Low switching loss PressFit pins locking technology. Patent # US.263.820 B2 UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION VS-ETL015Y120H is an integrated solution for a double interleaved boost converter. The EMIPAK-2B package is easy to use thanks to the PressFit pins and the exposed substrate provides improved thermal performance. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance.       ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Operating junction temperature Storage temperature range RMS isolation voltage DbpA - DbpB BYPASS DIODE TJ TStg VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t ...