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VS-EMG050J60N Dataheets PDF



Part Number VS-EMG050J60N
Manufacturers Vishay
Logo Vishay
Description Dual PFC
Datasheet VS-EMG050J60N DatasheetVS-EMG050J60N Datasheet (PDF)

www.vishay.com VS-EMG050J60N Vishay Semiconductors Dual Mode PFC, 60 A EMIPAK2 PRODUCT SUMMARY VCES VCE(ON) typical at IC = 50 A IC at TC = 98 °C Package Circuit 600 V 1.8 V 50 A EMIPAK2 Dual Mode PFC FEATURES • NPT Warp2 PFC IGBT with low VCE(ON) • Silicon carbide PFC diode • Antiparallel FRED Pt® fast recovery • Integrated thermistor • Square RBSOA • Operating frequency 60 kHz to 150 kHz • Low internal inductances • Low switching loss • UL approved file E78996 • Material categorization: .

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www.vishay.com VS-EMG050J60N Vishay Semiconductors Dual Mode PFC, 60 A EMIPAK2 PRODUCT SUMMARY VCES VCE(ON) typical at IC = 50 A IC at TC = 98 °C Package Circuit 600 V 1.8 V 50 A EMIPAK2 Dual Mode PFC FEATURES • NPT Warp2 PFC IGBT with low VCE(ON) • Silicon carbide PFC diode • Antiparallel FRED Pt® fast recovery • Integrated thermistor • Square RBSOA • Operating frequency 60 kHz to 150 kHz • Low internal inductances • Low switching loss • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION VS-EMG050J60N is an integrated solution for dual stage PFC converter in a single package. The EMIPAK2 package is easy to use thanks to the solderable terminals and provides improved thermal performance thanks to the exposed substrate. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Maximum operating junction temperature Storage temperature range RMS isolation voltage PFC IGBT Q1 - Q2 TJ TStg VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s Collector to emitter voltage Gate to emitter voltage Pulsed collector current Clamped inductive load current Continuous collector current Power dissipation ANTIPARALLEL DIODE D1 - D2 VCES VGES ICM ILM (1) IC PD TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C Diode continuous forward current Single pulse forward current Power dissipation PFC DIODE D3 - D4 IF TC = 25 °C TC = 80 °C IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C PD TC = 25 °C TC = 80 °C Repetitive peak reverse voltage Diode continuous forward current Single pulse forward current Power dissipation VRRM IF IFSM PD TC = 25 °C TC = 80 °C 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C TC = 25 °C TC = 80 °C Notes • Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (1) VCC = 400 V, VGE = 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C MAX. 150 - 40 to 125 3500 600 20 150 150 88 60 338 189 16 11 59 29 16 600 25 17 140 74 41 UNITS °C V V A W A W V A W Revision: 18-Oct-13 1 Document Number: 93495 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-EMG050J60N Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS PFC IGBT Q1 - Q2 Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage BVCES BVCES/TJ VGE = 0 V, IC = 500 μA VGE = 0 V, IC = 500 μA (25 °C to 125 °C) Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage VCE(ON) VGE(th) VGE(th)/TJ VGE = 15 V, IC = 27 A VGE = 15 V, IC = 50 A VGE = 15 V, IC = 27 A, TJ = 125 °C VGE = 15 V, IC = 50 A, TJ = 125 °C VCE = VGE, IC = 250 μA VCE = VGE, IC = 1 mA ( 25 °C to 125 °C) Forward transconductance Transfer characteristics Zero gate voltage collector current Gate to emitter leakage current ANTIPARALLEL DIODE D1 - D2 gfe VCE = 20 V, IC = 50 A VGE VCE = 20 V, IC = 50 A VGE = 0 V, VCE = 600 V ICES VGE = 0 V, VCE = 600 V, TJ = 125 °C IGES VGE = ± 20 V, VCE = 0 V Forward voltage drop PFC DIODE D3 - D4 IF = 20 A VF IF = 20 A, TJ = 125 °C Cathode to anode breakdown voltage Reverse leakage current Forward voltage drop VBR IR = 500 μA VR = 600 V IRM VR = 600 V, TJ = 125 °C IF = 10 A VF IF = 10 A, TJ = 125 °C MIN. TYP. MAX. UNITS 600 - - V - 0.1 - V/°C - 1.44 1.75 - 1.8 2.1 - 1.7 2.05 - 2.2 2.5 2.9 3.9 5.3 V - - 10 - mV/°C - 95 - s - 5.9 - V - 3 100 μA - 0.170 3 mA - ± 200 nA - 2.19 2.4 V - 1.93 2.15 600 - - V - 27 250 μA - 0.1 1 mA - 1.34 1.63 V - 1.36 1.65 SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS PFC IGBT Q1 - Q2 (WITH FREEWHEELING D3 - D4 PFC DIODE) Total gate charge (turn-on) Gate to emitter charge (turn-on) Gate to collector charge (turn-on) Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Qg Qge Qgc EON EOFF ETOT td(on) tr td(off) tf IC = 70 A VCC = 400 V VGE = 15 V IC = 50 A VCC = 400 V VGE = 15 V Rg = 4.7  L = 500 μH TJ = 25 °C (1) MIN. TYP. MAX. UNITS - 480 720 - 82 164 nC - 160 260 - 0.155 - - 0.471 - mJ - 0.626 - - 196 - - 29 - 220 - ns - 67 - Revision: 18-Oct-13 2 Document Number: 93495 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SWITCHING CHARACTERISTICS (TJ = 25 °C unless othe.


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