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VS-EMG050J60N
Vishay Semiconductors
Dual Mode PFC, 60 A
EMIPAK2
PRODUCT SUMMARY
VCES VCE(ON) typical at IC = 50 A
IC at TC = 98 °C Package Circuit
600 V 1.8 V 50 A EMIPAK2 Dual Mode PFC
FEATURES • NPT Warp2 PFC IGBT with low VCE(ON) • Silicon carbide PFC diode • Antiparallel FRED Pt® fast recovery • Integrated thermistor • Square RBSOA • Operating frequency 60 kHz to 150 kHz • Low internal inductances • Low switching loss • UL approved file E78996
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION VS-EMG050J60N is an integrated solution for dual stage PFC converter in a single package. The EMIPAK2 package is easy to use thanks to the solderable terminals and provides improved thermal performance thanks to the exposed substrate. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature Storage temperature range RMS isolation voltage PFC IGBT Q1 - Q2
TJ TStg VISOL
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
Collector to emitter voltage Gate to emitter voltage Pulsed collector current Clamped inductive load current
Continuous collector current
Power dissipation
ANTIPARALLEL DIODE D1 - D2
VCES VGES ICM ILM (1)
IC
PD
TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C
Diode continuous forward current Single pulse forward current Power dissipation PFC DIODE D3 - D4
IF
TC = 25 °C TC = 80 °C
IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
PD
TC = 25 °C TC = 80 °C
Repetitive peak reverse voltage Diode continuous forward current Single pulse forward current Power dissipation
VRRM IF
IFSM PD
TC = 25 °C TC = 80 °C 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C TC = 25 °C TC = 80 °C
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (1) VCC = 400 V, VGE = 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C
MAX. 150 - 40 to 125 3500
600 20 150 150 88 60 338 189
16 11 59 29 16
600 25 17 140 74 41
UNITS °C V V
A
W
A W V A W
Revision: 18-Oct-13
1 Document Number: 93495
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-EMG050J60N
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
PFC IGBT Q1 - Q2
Collector to emitter breakdown voltage
Temperature coefficient of breakdown voltage
BVCES BVCES/TJ
VGE = 0 V, IC = 500 μA
VGE = 0 V, IC = 500 μA (25 °C to 125 °C)
Collector to emitter voltage
Gate threshold voltage Temperature coefficient of threshold voltage
VCE(ON)
VGE(th) VGE(th)/TJ
VGE = 15 V, IC = 27 A VGE = 15 V, IC = 50 A VGE = 15 V, IC = 27 A, TJ = 125 °C VGE = 15 V, IC = 50 A, TJ = 125 °C VCE = VGE, IC = 250 μA VCE = VGE, IC = 1 mA ( 25 °C to 125 °C)
Forward transconductance Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current ANTIPARALLEL DIODE D1 - D2
gfe VCE = 20 V, IC = 50 A VGE VCE = 20 V, IC = 50 A
VGE = 0 V, VCE = 600 V ICES
VGE = 0 V, VCE = 600 V, TJ = 125 °C IGES VGE = ± 20 V, VCE = 0 V
Forward voltage drop PFC DIODE D3 - D4
IF = 20 A VF
IF = 20 A, TJ = 125 °C
Cathode to anode breakdown voltage Reverse leakage current
Forward voltage drop
VBR IR = 500 μA VR = 600 V
IRM VR = 600 V, TJ = 125 °C IF = 10 A
VF IF = 10 A, TJ = 125 °C
MIN. TYP. MAX. UNITS
600 - - V
- 0.1 - V/°C
- 1.44 1.75 - 1.8 2.1 - 1.7 2.05 - 2.2 2.5 2.9 3.9 5.3
V
- - 10 - mV/°C
- 95 -
s
- 5.9 -
V
- 3 100 μA
- 0.170 3
mA
- ± 200 nA
- 2.19 2.4 V
- 1.93 2.15
600 - - V - 27 250 μA - 0.1 1 mA - 1.34 1.63 V - 1.36 1.65
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
PFC IGBT Q1 - Q2 (WITH FREEWHEELING D3 - D4 PFC DIODE)
Total gate charge (turn-on) Gate to emitter charge (turn-on) Gate to collector charge (turn-on) Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time
Qg Qge Qgc EON EOFF ETOT td(on)
tr td(off)
tf
IC = 70 A VCC = 400 V VGE = 15 V
IC = 50 A VCC = 400 V VGE = 15 V Rg = 4.7 L = 500 μH TJ = 25 °C (1)
MIN. TYP. MAX. UNITS
- 480 720
- 82 164 nC
- 160 260
- 0.155 -
- 0.471 -
mJ
- 0.626 -
- 196 -
- 29 - 220 -
ns
- 67 -
Revision: 18-Oct-13
2 Document Number: 93495
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless othe.