isc Silicon PNP Power Transistor
2SB1038
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.) ·Low...
isc Silicon
PNP Power
Transistor
2SB1038
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1310 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-5
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.6
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc Silicon
PNP Power
Transistor
2SB1038
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -50mA; VCE= -5V
hFE-2
DC Current Gain
IC= -0.5A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.1A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
hFE-2 Classifications
...