B1038

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1310 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.6 A 30 W 150 ℃ -55~150 ℃ Product Specification 2SB1038 isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -50mA; VCE= -5V hFE-2 DC Current Gain IC= -0.5A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz  hFE-2 Classifications MLK 40-80 60-120 100-200 Product Specification 2SB1038 MIN TYP. MAX UNIT -60 V -1.5 ...