FX901

Ordering number:EN5387 FX901 DC-DC Converter Applications Features · Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low forward-voltage Schottky barrier diode faciliteting high-density mounting. PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode Package Dimensions unit:mm 2133 [FX901] Electrical Connection 1:Base 2:Emitter 3:Anode, Source 4:Gate 5, 6:Common (Collector, Cathode, Drain) SANYO:XP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Allowable Power Dissipation Total Power Dissipation Storage Temperature [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Junction Temperature [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Channel Temperature [SBD] Average Rectified Current IO 500 mA VDSS VGSS ID IDP Tch PW≤10µs, duty cycle≤1% 11 ±10 2 8 150 V V A A ˚C Symbol P P PT Tstg VCBO VCEO VEBO IC ICP IB Tj Tc=25˚C, 1 unit Conditions Mounted on ceramic board (750mm2×0.8mm) 1 unit Mounted on ceramic board (750mm2×0.8mm) Ratings 8 1.5 2 –55 to +150 –15 –11 –7 –3 –5 –600 150 Unit W W W ˚C V V V A A mA ˚C · Marking:901 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/32996YK (KOTO) TA-0622 No.5...