Document
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL63H5S-A/B/C Tentative Signature of Approval
Approvaed by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL63H5S-A/B/C
InGaAlP Laser Diode
Tentative
Quantum Semiconductor International Co., Ltd.
Ver. 3 2006
♦OVERVIEW
QL63H5S-A/B/C is a MOCVD grown 635nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 20mW for optoelectronic devices such as Optical Leveler and Modules.
♦APPLICATION
- Bar Code Scanner - Laser Module
♦FEATURES
- Visible Light Output : λp = 635 nm
- Optical Power Output : 20mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3)
Fig. 1 QL63H5SA
Fig. 2 QL63H5SB
Fig. 3 QL63H5SC
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Tentative
Items
Optical Output Power Laser Diode Reverse
Voltage Photo Diode Reverse
Voltage Operating Temperature
Storage Temperature
Symbols P V
V Topr Tstg
Values 24 2
30 −10 ~ +50 −40 ~ +85
Unit mW V
V °C °C
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C 1)2)
Items
Symbols
Min. Typ. Max.
Unit
Optical Output Power
Po
- 20 -
mW
Threshold Current
Ith
- 30 50
mA
Operating Current
Iop
- 60 80
mA
Operating Voltage
Vop
- 2.3 2.6
V
Lasing Wavelength
λp
630 639 645
nm
Beam Divergence3) Beam Angle
θ θ⊥ ∆θ ∆θ ⊥
6 8 11 deg
25 30 35
deg
- - ±2.0 deg
- - ±3.0 deg
Monitor Current
Im
0.05 0.25
0.7
mA
Optical Distance
∆X, ∆Y, ∆Z
-
- ±60
µm
1) Initial values
2) All above values are evaluated with QSI’s measuring apparatus
3) Full angle at half maximum
Condition
Po=20mW Po=20mW Po=20mW Po=20mW Po=20mW Po=20mW Po=20mW Po=20mW Po=20mW
-
NOTICE : QL63H5S-A/B/C to be operated on APC The above product specifications are subject to change without notice.
♦PACKAGE DIMENSION
♦PACKING
.