QL65E7S-B

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL65E7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65E7S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 0 JAN. 2004 ♦OVERVIEW QL65E7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 7mW and low operation current for optoelectronic devices such as Pick up & Bar Code Reader. ♦APPLICATION - Laser Module - Optical Pick-up(Combo type : DVD+CDRW) - Bar Code Reader ♦FEATURES - Visible Light Output : λp = 650 nm - Optical Power Output : 7mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL65E7SA Fig. 2 QL65E7SB Fig. 3 QL65E7SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 9 2 30 −10 ~ +70 −40 ~ +85 Unit mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Symbols Po Ith Iop Min. - Typ. Max. 730 45 45 55 Unit mW mA mA Condition Po=7m...