LASER DIODE
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :. Model : QL65E7S-A/B/C-L
Signature of Approval
Approved by Checke...
Description
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :. Model : QL65E7S-A/B/C-L
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL65E7S-A/B/C-L
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver. 0 Oct. 2004
♦OVERVIEW
QL65E7S-A/B/C-L is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 7mW and low operation current for optoelectronic devices such as Optical storage & Bar Code Reader.
♦APPLICATION
- Laser Module - Optical Pick-up(Combo type : DVD+CDRW) - DVD-ROM Drives, DVD-video players - Bar Code Reader
♦FEATURES
- Visible Light Output : λp = 650 nm
- Optical Power Output : 7mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3)
Fig. 1 QL65E7SA-L
Fig. 2 QL65E7SB-L
Fig. 3 QL65E7SC-L
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Optical Output Power Laser Diode Reverse
Voltage Photo Diode Reverse
Voltage Operating Temperature
Storage Temperature
Symbols P V
V Topr Tstg
Values 9 2
30 −10 ~ +70 −40 ~ +85
Unit mW V
V °C °C
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items Optical Output Power Threshold Current Operating Current Slope Efficiency
Symbols Po It...
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