S6510MG

S6510MG TECHNICAL DATA Infrared Laser Diode Features Lasing Mode Structure: single mode Peak Wavelength : typ. 650 nm Optical Ouput Power: 10 mW Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr VrPD TC Tstg Value 12 2 30 -10 … +70 -40 … +85 Unit mW V V °C °C Specifications (TC=20°C) Item Optical Specifications CW Output Power Center Wavelength FWHM Beam Divergence Electrical Specifications Threshold Current Operating Current Slope Efficiency Operating Voltage Monitor Current Symbol PO λC θ║ θ┴ Ith Iop η Uop Im Min. 650 8 25 0.6 0.1 Typ. 10 655 10 28 20 32 0.9 2.2 0.3 Max. 665 13 32 25 38 2.5 0.5 Unit mW nm deg deg mA mA mW/mA V mA The above specifications are for reference purpose only and subjected to change without prior notice. 23.09.2010 S6510MG 1 of 5 Package Dimensons 5.6 mm Package (Unit:mm) Typical Performance Curves Optical Ouput Power vs. Forward Current 23.09.2010 S6510MG 2 of 5 Forward Voltage vs. Forward Current Peak Wavelength vs. Case Temperature Far-Field Pattern 23.09.2010 S6510MG 3 of 5 Monitor Current vs. Optical Output Power Slope Efficiency vs. Case Temperature Threshold Current vs. Case Temerature 23.09.2010 S6510MG 4 of 5 Safety of Laser light Laser Light can damage the human ey...