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QL65I7S-C

QSI

LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65I7S-A/B/C Signature of Approval Approved by Checked b...


QSI

QL65I7S-C

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65I7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65I7S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 3 Jan. 2007 ♦OVERVIEW QL65I7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for optoelectronic devices such as DVD-R/+R, DVD-Recorder, High Speed DVD-player and Inderstrial Bar Code Scanner. ♦APPLICATION - Standard speed DVD-R/+R - DVD-RW/+RW - DVD-RAM ♦FEATURES - Visible Light Output : λp = 658 nm(typ.) - Optical Power Output : 30mW CW, 50mW PULSE(Tp = 0.5 - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode , Duty = 50%) ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL65I7SA Fig. 2 QL65I7SB Fig. 3 QL65I7SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols Po(CW) Po(pulse) VR VR Topr Tstg Values 35 50 2 30 −10 ~ +70 −40 ~ +85 Unit mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Slope Efficiency ...




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