QL65J7S-A

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65J7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65J7S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver 0 JAN. 2007 ♦OVERVIEW QL65J7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 50mW for optoelectronic devices such as DVD R/RW ♦APPLICATION - DVD R/RW - Optical Module ♦FEATURES - Visible Light Output : λp = 660 nm(typ.) - Optical Power Output : 50mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL65J7SA Fig. 2 QL65J7SB Fig. 3 QL65J7SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 60 2 30 −10 ~ +75 −40 ~ +85 ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Slope Efficiency Operating Voltage Lasing Wavelength Beam Divergence Beam Angle Monitor Current Optical Distance Symbols Po Ith Iop SE Vop λp θ  θ⊥ ∆θ  ∆θ ⊥ Im ∆X, ∆Y, ∆Z Min. Typ. Ma...