LASER DIODE
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL65J7S-A/B/C
Signature of Approval
Approved by Checked b...
Description
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL65J7S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL65J7S-A/B/C
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver 0 JAN. 2007
♦OVERVIEW
QL65J7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 50mW for optoelectronic devices such as DVD R/RW
♦APPLICATION
- DVD R/RW - Optical Module
♦FEATURES
- Visible Light Output : λp = 660 nm(typ.)
- Optical Power Output : 50mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3)
Fig. 1 QL65J7SA
Fig. 2 QL65J7SB
Fig. 3 QL65J7SC
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Optical Output Power Laser Diode Reverse
Voltage Photo Diode Reverse
Voltage Operating Temperature
Storage Temperature
Symbols P V
V Topr Tstg
Values 60 2
30 −10 ~ +75 −40 ~ +85
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items Optical Output Power Threshold Current Operating Current Slope Efficiency Operating Voltage Lasing Wavelength
Beam Divergence
Beam Angle
Monitor Current Optical Distance
Symbols
Po Ith Iop SE Vop λp
θ θ⊥ ∆θ ∆θ ⊥
Im
∆X, ∆Y, ∆Z
Min. Typ. Ma...
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