QL65L6S-A

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65L6S-A/B/C Tentative Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65L6S-A/B/C InGaAlP Laser Diode Tentative Quantum Semiconductor International Co., Ltd. Ver. 1 Aug. 2006 ♦OVERVIEW QL65L6S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of CW 80mW and pulse 160mW - for optical storage devices such as High Power Laser Modules. ♦APPLICATION - High Power Laser Modules - Medical Applications - Portable High Density Optical Disc Drives ♦FEATURES - Visible Light Output - Optical Power Output - Package Type : λp = 660 nm : 80mW CW : TO-18 (5.6mmφ) ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL65L6SA Fig. 2 QL65L6SB Fig. 3 QL65L6SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Tentative Items Symbols Values Unit Optical Output Power ( CW ) Po 80 mW Laser Diode Reverse Voltage V2 V Photo Diode Reverse Voltage V 30 V Operating Temperature Topr −10 ~ +60 °C Storage Temperature Tstg −40 ~ +80 °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Threshold Current Operating Current Operating Voltage Peak Wavelength Slope Effiency Beam Divergence3) Beam Angle Monit...