Document
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :. Model : QL67D6S-A/B/C
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315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
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QL67D6S-A/B/C
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver. 0 JAN. 2004
♦OVERVIEW
QL67D6S-A/B/C is a MOCVD grown 670nm band Gain-Guided type InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Bar Code Reader.
♦APPLICATION
- Optical Leveler - Laser Module - Bar Code Reader
♦FEATURES
- Visible Light Output : λp = 670 nm
- Optical Power Output : 5mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3)
Fig. 1 QL67D6SA
Fig. 2 QL67D6SB
Fig. 3 QL67D6SC
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Optical Output Power Laser Diode Reverse
Voltage Photo Diode Reverse
Voltage Operating Temperature
Storage Temperature
Symbols P V
V Topr Tstg
Values 7 2
30 −10 ~ +60 −40 ~ +85
Unit mW V
V °C °C
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items Optical Output Power
Symbols Po
Min.
-
Typ. Max.
5-
Unit
mW
Condition
-
Threshold Current Operating Current
Ith Iop
- 40 60 - 50 70
mA mA
Po=5mW
Operating Voltage
Vop
- 2.3 2.6
V
Po=5mW
Lasing Wavelength Beam Divergence Beam Angle
λp θ ⎢⎢ θ⊥ Δθ ⎢⎢ Δθ ⊥
660 670 680 8 11 15 24 32 35 - - ±1.5 - - ±2.5
nm deg deg deg deg
Po=5mW Po=5mW Po=5mW Po=5mW Po=5mW
Monitor Current Astigmatism Optical Distance
Im 0.1 0.2 0.5
As 30
ΔX, ΔY, ΔZ
-
- ±60
mA μm μm
Po=5mW -
NOTICE : QL67D6S-A/B/C to be operated on APC
The above product specifications are subject to change without notice.
♦EXAMPLE of REPRESENTATIVE CHARACTERISTICS
♦PACKAGE DIMENSION
♦PACKING
.