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QL67D6S-A Dataheets PDF



Part Number QL67D6S-A
Manufacturers QSI
Logo QSI
Description LASER DIODE
Datasheet QL67D6S-A DatasheetQL67D6S-A Datasheet (PDF)

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL67D6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL67D6S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 0 JAN. 2004 ♦OVERVIEW QL67D6S-A/B/C is a MOCVD grown 670nm band Gain-Guided type InGaAlP laser diode with quantum well structure. It's an attractive light source, with a .

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL67D6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL67D6S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 0 JAN. 2004 ♦OVERVIEW QL67D6S-A/B/C is a MOCVD grown 670nm band Gain-Guided type InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Bar Code Reader. ♦APPLICATION - Optical Leveler - Laser Module - Bar Code Reader ♦FEATURES - Visible Light Output : λp = 670 nm - Optical Power Output : 5mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL67D6SA Fig. 2 QL67D6SB Fig. 3 QL67D6SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 7 2 30 −10 ~ +60 −40 ~ +85 Unit mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Symbols Po Min. - Typ. Max. 5- Unit mW Condition - Threshold Current Operating Current Ith Iop - 40 60 - 50 70 mA mA Po=5mW Operating Voltage Vop - 2.3 2.6 V Po=5mW Lasing Wavelength Beam Divergence Beam Angle λp θ ⎢⎢ θ⊥ Δθ ⎢⎢ Δθ ⊥ 660 670 680 8 11 15 24 32 35 - - ±1.5 - - ±2.5 nm deg deg deg deg Po=5mW Po=5mW Po=5mW Po=5mW Po=5mW Monitor Current Astigmatism Optical Distance Im 0.1 0.2 0.5 As 30 ΔX, ΔY, ΔZ - - ±60 mA μm μm Po=5mW - NOTICE : QL67D6S-A/B/C to be operated on APC The above product specifications are subject to change without notice. ♦EXAMPLE of REPRESENTATIVE CHARACTERISTICS ♦PACKAGE DIMENSION ♦PACKING .


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