QL67F6S-A

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL67F6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL67F6S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver 1. July. 2008 ♦OVERVIEW QL67F6S-A/B/C is a MOCVD grown 670nm band Gain-Guided type InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW for optoelectronic devices such as Bar Code Reader. ♦APPLICATION - Optical Leveler - Laser Module - Bar Code Reader ♦FEATURES - Visible Light Output : λp = 670 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL67F6SA Fig. 2 QL67F6SB Fig. 3 QL67F6SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 12 2 30 −10 ~ +60 −40 ~ +85 Unit mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Symbols Po Min. - Typ. Max. 10 - Unit mW Condition - Threshold Current Operating Current Ith Iop - 40 60 - 50 70 mA mA Po=10mW Operating Voltage Vop ...