LASER DIODE
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL68I6S-A/B/C Signature of Approval
Approved by Checked b...
Description
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL68I6S-A/B/C Signature of Approval
Approved by Checked by Issued by
Approval by Customer
WWW.QSILaser.com
QL68I6S-A/B/C
InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd
2004. Rev 1.
♦ OVERVIEW
QL68I6S-A/B/C is a MOCVD grown 0.68 m band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for opto-electronic devices such as Industrials.
♦ APPLICATION
Industrials Laser Module
♦ FEATURES
Visible Light Output : λp = 685nm
Optical Power Output : 30 mW CW
Package Type
: TO-18 (5.6mmφ)
Built-in Photo Diode for Monitoring Laser Output
♦ ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathod, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathod (Fig. 3)
Fig. 1 QL68I6SA
Fig. 2 QL68I6SB
Fig. 3 QL68I6SC
♦ ABSOLUTE MAXIMUM RATING at Tc=25
Items
Optical Output Power
Laser Diode Reverse Voltage
Photo Diode Reverse Voltage
Operating Temperature
Storage Temperature
Symbols
P V
V Topr Tstg
Values
35 2
30 -10 +60 -40 +85
Unit
mW V
V °C °C
♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25
Items Optical Output Power
Threshold Current Operating Current Operating Voltage Lasing Wavelength
Beam Divergence
Beam Angle
Monitor Current Astigmatism
Optical Distance
Symbols Po Ith Iop Vop λp
θ II θ⊥ ∆ θ II ∆θ⊥
Im
∆X, ∆Y, ∆Z
Min. 2
670 7 16 -
0.05 -
Typ. 30 35 80 2.4 685 9.5 20 0.2 -
Max. 60
140 3
700 12 25 2.0 2...
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