RLT760-10G

RLT760-10G v 1.1 04.08.2013 Description RLT760-10G is a Laser Diode emitting at typical 760 nm with rated output power of 10 mW CW at room temperature. The 9 mm TO package includes a cap and flat window, and contains a built in monitor PD. Maximum Ratings Parameter Optical Output Power Operating Temperature Storage Temperature Soldering Temperature Symbol PO TCASE TSTG TSOLD Min. -20 -40 Values Max. 10 +60 +85 180 Unit mW °C °C °C Specifications Parameter Central Wavelength Optical Output Power Emitting Area Threshold Current Forward Current Forward Voltage Beam Divergence Beam Divergence Spectral Width (FWHM) Static Alignment Positional Accuracy Mode Structure Slope Efficiency Monitor Current Symbol λC PO WxH ITH IOP UOP ӨII Ө┴ Δλ Δa II x ΔX, ΔY, ΔZ η IM Min. 755 - 30 150 1.5 8 25 1.0 - 0.07 Values Typ. 760 10 3 x 1.5 40 200 2.0 10 30 2.0 SM 0.5 0.4 Max. 765 - 50 250 2.2 12 35 5.0 < ±3 ±100 0.8 Unit nm mW µm mA mA V deg. deg. nm deg. µm mW/mA mA www.roithner-laser.com 1 Electrical Connection Lead PIN 1 PIN 2 PIN 3 Description PD Cathode PD Anode, LD Cathode LD Anode Drawing Bottom View All dimensions in mm Mounting Instruction In order to maintain lifetime and stability of the laser diode it is essential to provide efficient heat management. Heat dissipation is possible through the base plate only. For long time stable operation proper contact between laser diode base plate and heat sink is mandatory. Safety Advice This laser module emits highly concen...