LASER DIODE
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Fuji-Xerox Model : QL78F6SA-L
Signature of Approval
Approved by C...
Description
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Fuji-Xerox Model : QL78F6SA-L
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL78F6SA-L
AlGaAs Laser Diode
Quantum Semiconductor International Co., Ltd.
2007-10-24
♦OVERVIEW
QL78F6SA-L is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 8mW for industrial optical module and sensor application
♦APPLICATION
- Sensor - Industrial optical module
♦FEATURES
- Visible Light Output : λp = 780 nm
- Optical Power Output : 8mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathod, PD anode (Fig. 1)
Fig. 1 QL78F6SA-L
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Optical Output Power Laser Diode Reverse
Voltage Photo Diode Reverse
Voltage Operating Temperature
Storage Temperature
Symbols P V
V Topr Tstg
Values 10 2
30 −10 ~ +60 −40 ~ +85
Unit mW
V
V °C °C
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items Optical Output Power
Threshold Current Operating Current Differential efficiency Operating Voltage Lasing Wavelength
Beam Divergence
Beam Angle
Monitor Current Optical Distance
Astigmatism
Symbols Min.
Po -
Ith 6
Iop -
0.3
Vop 1.5
λp 775
θ θ⊥ ∆θ ∆θ ⊥
Im
7 25 0.4
∆X, ∆Y, ∆Z -
As
Typ.
8 12 ...
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