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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL78J6S-A/B/C
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315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
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QL78J6S-A/B/C
AlGaAs Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver. 0 2004
♦OVERVIEW
QL78J6S-A/B/C is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 50mW for industrial optical module and sensor application
♦APPLICATION
- Sensor - Industrial optical module
♦FEATURES
- Visible Light Output : λp = 780 nm
- Optical Power Output : 50mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3)
Fig. 1 QL78J6SA
Fig. 2 QL78J6SB
Fig. 3 QL78J6SC
♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Optical Output Power Laser Diode Reverse
Voltage Photo Diode Reverse
Voltage Operating Temperature
Storage Temperature
Symbols P V
V Topr Tstg
Values 50 2
30 −10 ~ +60 −40 ~ +85
Unit mW V
V °C °C
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items Optical Output Power Threshold Current Operating Current Differential efficiency Operating Voltage Lasing Wavelength
Beam Divergence
Beam Angle
Monitor Current Optical Distance Astigmatism
Symbols Po Ith Iop
Vop λp
θ θ⊥ ∆θ ∆θ ⊥
Im
∆X, ∆Y, ∆Z As
Min. Typ. Max
- 50 - 25 40 - 75 100 0.6 1.0 1.4 - 2 2.8 775 785 795 7 9 12 17 22 27 - - ±2.0 - - ±3.0 0.1 0.25 0.6 - - ±60 -5-
Unit
mW mA mA mW/mA V nm deg deg deg deg mA µm µm
Condition
Po=50mW 40mW/ I(45mW)-I(5mW) Po=50mW Po=50mW Po=50mW Po=50mW
Po=50mW
Po=50mW
NOTICE : QL78J6S-A/B/C to be operated on APC
The above product specifications are subject to change without notice.
♦PACKAGE DIMENSION
♦PACKING
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