ADL-78901SX

AlGaAs Infrared Laser Diode ADL-78901SX 3.3mm Mini Package! 200mW High Power Reliable Operation Features 1. Smallest package 2. Low operating current 3. Small aspect ratio 4. High COD level Applications 1. Virtual keyboard 2. Super slim 40X CD-R/RW OPU Absolute maximum ratings Parameter Symbol Condition Light output power PO CW Pop Pulsed* Reverse voltage(LD) Case temperature Storage temperature VRL TC TS - * Pulse width 0.5us, duty cycle 50% Rating 100 220 2 -10~+70 -40~+85 Unit mW V oC oC Electrical and optical characteristics (Tc=25 oC) Parameter Symbol Min. Typ. Peak wavelength 775 785 Threshold current Operating current Operating voltage Differential efficiency Ith 25 35 Iop 90 115 Vop 1.5 2 0.8 1.1 Parallel divergence angle 89 Perpendicular divergence angle 15 17 Parallel FFP deviation angle -- Perpendicular FFP deviation angle -- Emission point accuracy xyz - - Max. 795 55 160 2.2 1.3 10 19 2 3 80 Unit Conditions (CW) nm mA Po=90mW mA V mW/mA Po=88-90mW deg deg deg Po=90mW deg um Precautions 1. Do not operate the device above the maximum rating condition, even momentarily. It may cause unexpected permanent damage to the device. 2. Semiconductor laser device is very sensitive to electrostatic discharge. High voltage spike current may change the characteristics of the device, or malfunction at any time during its service period. Therefore, proper measures for preventing electrostatic discharge are strongly recommended. 3. Effect...