STW26NM60
STW26NM60
STU26NM60, STU26NM60I
N-CHANNEL 600V - 0.125Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh™ Power MOSFET...
Description
STW26NM60
STU26NM60, STU26NM60I
N-CHANNEL 600V - 0.125Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh™ Power MOSFET
TYPE
VDSS
RDS(on)
ID
STW26NM60 STU26NM60 STU26NM60I
600 V 600 V 600 V
< 0.135 Ω < 0.135 Ω < 0.135 Ω
30 A 26 A 26 A
n TYPICAL RDS(on) = 0.125Ω n HIGH dv/dt AND AVALANCHE CAPABILITIES n IMPROVED ESD CAPABILITY n LOW INPUT CAPACITANCE AND GATE
CHARGE n LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
TO-247
123
Max220
Max220I
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
MARKING
STW26NM60
W26NM60
STU26NM60
U26NM60
STU26NM60I
U26NM60I
PACKAGE TO-247 Max220 Max220I
PACKAGING TUBE TUBE TUBE
February 2002
1/11
STW26NM60, STU26NM60, STU26NM60I
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current...
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