C1214

2SC1214 Silicon NPN Epitaxial Application Low frequency amplifier Outline TO-92 (1) ADE-208-1050 (Z) 1st. Edition Mar. 2001 3 2 1 1. Emitter 2. Collector 3. Base 2SC1214 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 50 4 500 600 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base breakdown voltage V(BR)CBO 50 Collector to emitter breakdown V(BR)CEO voltage 50 Emitter to base breakdown voltage V(BR)EBO 4 Collector cutoff current DC current transfer ratio I CBO hFE* hFE — 60 10 Typ — — — — — — Collector to emitter saturation VCE(sat) voltage — 0.2 Base to emitter voltage VBE — 0.64 Note: 1. The 2SC1214 is grouped by hFE as follows. B CD 60 to 120 100 to 200 160 to 320 Max — — — 0.5 320 — 0.6 — Unit V V V µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 500 mA (pulse test) IC = 150 mA, IB = 15 mA (Pulse test) VCE = 3 V, IC = 10 mA See characteristic curves of 2SC1213. Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 900 600 300 0 50 100 150 Ambient Temperature Ta (°C) 2SC1214 2SC1214 Package Dimensions 4.8 ± 0.4 3.8 ± 0.4 As of January, 2001 Unit: mm 5.0 ± 0.2 0.7...