S8305MG

S8305MG TECHNICAL DATA Infrared Laser Diode Features Lasing Mode Structure: multi mode Peak Wavelength : typ. 830 nm Optical Ouput Power: 5 mW Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=25°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO VrLD VrPD TC Tstg Value 5 2 30 -10 … +40 -10 … +85 Unit mW V V °C °C Specifications (TC=25°C, PO=5mW) Item Symbol Min. Optical Specifications Center Wavelength FWHM Beam Divergence* λC 820 θ║ 4 θ┴ 27 Electrical Specifications Threshold Current Operating Current Slope Efficiency Ith - Iop η 0.3 Operating Voltage Monitor Current Uop Im 0.05 * θ║ and θ┴ are defined as the angle within the intensity is 50% of the peak value. Typ. 830 6 31 12 21 0.6 1.9 0.1 Max. 840 9 33 18 25 1 2.5 0.15 Unit nm deg deg mA mA mW/mA V mA The above specifications are for reference purpose only and subjected to change without prior notice. 04.10.2011 S8305MG 1 of 5 Package Dimensons 5.6 mm Package (Unit:mm) Typical Performance Curves Optical Ouput Power vs. Forward Current 04.10.2011 S8305MG 2 of 5 Forward Voltage vs. Forward Current Peak Wavelength vs. Case Temperature Far-Field Pattern 04.10.2011 S8305MG 3 of 5 Monitor Current vs. Optical Output Power Slope Efficiency vs. Case Temperature Threshold Current vs. Case Temerature 04.10...