ELD83NPT5

Multi-Quantum Well (MQW) Laser Diode Specification Model: ELD83NPT5 03.08.2010 eld83npt5.doc 1 of 10 Catalog 1.Scope………………………………………………………………………………………………………..3 2.Outline Dimensions and Terminal Connections …………………………………… ………………3 3. Ratings and Characteristics …………………………………………………………………………..4 4. Reliability ………………………………………………………………………………………………..5 5.Incoming inspection …………………………………………… ………………………………………..6 6. Supplements………………………………………………………………………………………………..7 7. Operation note ………………………………………………………………………………………..7 8. Quality assurance ……………………………………………………………………………………….. 8 9. Security ………………………………………………………………………………………………….9 10. Note …… ……………………………………………………………………………………………….9 03.08.2010 eld83npt5.doc 2 of 10 1 Scope: The specification covers the appearance and characteristics of 830nm Laser Diode used as light source, It’s model is ELD83NPT5.This product is packaged with an ALGaAs multiple quantum well invisible laser diode chip and a silicon photodiode for monitoring optical power output. Oscillation transverse mode of this model is TE. 2. Outline Dimensions and Terminal Connections Average single quality0.31g General tolerance: ±0.2 Unit: mm No. Component a Laser diode chip b Photodiode chip Material AlGaAs Si finish c Stem Fe Gold-plated d Cap Kovar Nickel-plated e Window glass Glass n = 1.49 f Lead pins Kovar Gold-plated 3. Ratings and Characteristics 03.08.2010 eld83npt5.doc 3 of 10 3－1 Absolute Maximum Ratings (Tc=25℃ (case temperature)) Parameter S...