S8450MG

S8450MG TECHNICAL DATA Infrared Laser Diode Features Lasing Mode Structure: multi mode Peak Wavelength : typ. 840 nm Optical Ouput Power: 50 mW Package: 5.6 mm Electrical Connection Pin Configuration PIN Function 1 LD Cathode 2 LD Anode 3 n.c. Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr TC Tstg Value 50 2 -10 … +40 -15 … +85 Unit mW V °C °C Specifications (TC=20°C) Item Optical Specifications CW Output Power Center Wavelength FWHM Beam Divergence Electrical Specifications Threshold Current Operating Current Slope Efficiency Operating Voltage Symbol PO λC θ║ θ┴ Ith Iop η Uop Min. 830 10 22 0.7 1.5 Typ. 50 840 15 30 28 85 0.9 1.8 Max. 850 20 38 35 110 2.1 Unit mW nm deg deg mA mA mW/mA V The above specifications are for reference purpose only and subjected to change without prior notice. 04.10.2011 S8450MG 1 of 5 Package Dimensons 5.6 mm Package (Unit:mm) Typical Performance Curves Optical Ouput Power vs. Forward Current 04.10.2011 S8450MG 2 of 5 Forward Voltage vs. Forward Current Peak Wavelength vs. Case Temperature Far-Field Pattern 04.10.2011 S8450MG 3 of 5 Slope Efficiency vs. Case Temperature Threshold Current vs. Case Temerature 04.10.2011 S8450MG 4 of 5 Safety of Laser light Laser Light can damage the human eyes and skin. Do not expose the eye or skin directly to any laser light and/or through optical lens. When handling the LDs,...