RLT8505MG

RLT8505MG TECHNICAL DATA Infrared Laser Diode Features AlGaAs laser diode Peak Wavelength: 850 nm Optical Ouput Power: 5 mW Package: 5.6 mm, with photo diode Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=25°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO VR (LD) VR (PD) TC Tstg Value 5 2 30 -10 … +40 -40 … +85 Specifications (TC=25°C) Item Optical Specifications CW Output Power Peak Wavelength * FWHM Beam Divergence Electrical Specifications Threshold Current Operating Current Slope Efficiency Operating Voltage Monitor Current * Measuring specifications. Symbol PO λP θ║ θ┴ Ith Iop η Uop Im Min. 845 8 25 5 15 0.4 1.8 0.3 Typ. 5 850 10 30 10 20 0.5 1.9 0.5 The above specifications are for reference purpose only and subjected to change without prior notice. Max. 855 11 40 15 25 0.55 2.0 1.0 Unit mW V V °C °C Unit mW nm deg deg mA mA W/A V mA 22.10.2013 RLT8505MG 1 of 2 Package Dimensons 5.6 mm Package (Unit:mm) Cautions 1. Operating methode This LD shall change its forward voltage requirement and optical ouput power according to temperature change. Also, the LD will require more operation current to maintain same ouput power as it degrades. In order to maintain output power, use of APC (Automatic Power Control) is recommended. Which use monitor feedback to adjust the operation curr...