QL85I6S-B

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL85I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL85I6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver.1 Jan.2005 ♦OVERVIEW QL85I6SA is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for industrial optical module and sensor applications. ♦APPLICATION - Sensor - Industrial Optical Module ♦FEATURES - Visible Light Output : λp = 850 nm - Optical Power Output : 30mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL85I6SA Fig. 2 QL85I6SB Fig. 3 QL85I6SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Symbols Values Unit Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature P V V Topr Tstg 32 2 30 −10 ~ +60 −40 ~ +85 mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Slope Efficiency Operating Voltage Lasing Wavelength Beam Divergence Beam Angle Monitor Current Astigmatism Optical Distance Symbols Po Ith Iop SE Vop λp θ...