RLT85100MG

RLT85100MG Laser Diode Technical Data ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) DESCRIPTION SYMBOL RATED VALUE Features Index Guided MQW Structure Wavelength : 850 nm (Typ.) Optical Power : 100 mW CW Threshold Current : 100 mA ( Typ. ) Package Style : TO-18 (5.6 mmØ) Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) Po Top Tstg VLDR VPDR 100 -10 to +50 -40 to +85 2 30 OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ) DESCRIPTION SYMBOL Lasing Wavelength (nm) Threshold Current (mA) Operating Current (mA) Operating Voltage (V) Monitor Current (mA) Slope Efficiency (mW/mA) Beam Divergence ⎪⎢ (°) Beam Divergence ⊥ (°) Astigmatism (μm) λp Ith Iop Vop Im η θ⎪⎢ θ⊥ As MIN. 835 70 200 1.8 0.1 0.5 3 30 * TYPICAL 850 100 250 2.0 1.0 0.7 5 40 11 MAX. 865 150 350 2.5 2.0 0.9 8 50 * TEST CONDITION Po=100mW Po=100mW Po=100mW Po=100mW Po=100mW, VR=5V *** Po=100mW Po=100mW Po=100mW, NA=0.4 03.08.2010 rlt85100mg.doc 1 of 1 ...