QL90F7S-C

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL90F7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL90F7S-A/B/C InGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Jun.2004. Ver. 0 ♦OVERVIEW QL90F7S-A/B/C is a MOCVD grown 905nm band InGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 10mW for Laser, industrial optical module and sensor application ♦APPLICATION - Sensor ♦FEATURES - Visible Light Output : λp = 905 nm - Optical Power Output : 10mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL90F7SA Fig. 2 QL90F7SB Fig. 3 QL90F7SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 12 2 30 −10 ~ +70 −40 ~ +85 Unit mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Operating Voltage Slope Efficiency Lasing Wavelength Beam Divergence Beam Angle Monitor Current Optical Distance Symbols Po Ith Iop Vop SE λp θ  θ⊥ ∆θ  ∆θ ⊥ Im ∆X, ∆Y, ∆Z...