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FY7ACH-03A

Mitsubishi Electric Semiconductor

HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE FY7ACH-03A OUTLINE DRAWING “  Dimensions in mm 6.0...


Mitsubishi Electric Semiconductor

FY7ACH-03A

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MITSUBISHI Nch POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE FY7ACH-03A OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 Œ Ž SOURCE   GATE  ‘ ’ “ DRAIN ’“ ‘   q 2.5V DRIVE q VDSS .................................................................................. 30V q rDS (ON) (MAX) ............................................................. 26mΩ q ID ........................................................................................... 7A Œ Ž SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ±10 7 49 7 1.7 6.8 1.8 –55 ~ +150 –55 ~ +150 0.07 Unit V V A A A A A W °C °C g Sep.1998 L = 10µH MITSUBISHI Nch POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 4V ID = 3A, VGS = 2.5V ID = 7A, VGS = 4V ID = 7A, VDS =...




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