High Power Infrared Laser Diode
ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roith...
Description
ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT9830MG-N TECHNICAL DATA
High Power Infrared Laserdiode
Structure: index guided, single transverse mode Lasing wavelength: 980 nm typ. Output power: 30 mW cw Package: 5.6 mm, TO-18
PIN CONNECTION:
NOTE!
LASERDIODE MUST BE COOLED!
1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode
Maximum Ratings (Tc = 25°C)
CHARACTERISTIC Optical Output Power LD Reverse Voltage PD Reverse Voltage Operation Case Temperature Storage Temperature
SYMBOL
Po VR(LD) VR(PD)
TC TSTG
RATING 30 2 30
-10 .. +60 -40 .. +85
UNIT mW
V V °C °C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Threshold Current Operation Current Operating Voltage Lasing Wavelength Beam Divergence
Ith Iop Vop λp θ//
cw Po = 30 mW Po = 30 mW Po = 30 mW Po = 30 mW
Beam Divergence θ⊥ Po = 30 mW
Slope Efficiency
η
cw
Monitor Current
Im Po = 30 mW
MIN 10
970 7 30 0.5
TYP 15 60 1.5 980 8 33 0.7 0.75
MAX 20 80 1.7 983 12 38 1 1
UNIT mA mA V nm
° °
mW/mA
mA
...
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