RLT98500GOP

RLT98500GOP TECHNICAL DATA High Power Infrared Laser Diode Features CW Output Power: 500 mW Typical 975 nm Emission Wavelength High-efficiency Quantum Well Structure TO5 Package Applications Solid-state Laser Pumping Medical Usage Infrared Night Vision Light Sources Information to identify PIN CONNECTION 1. Laserdiode cathode 2. Laserdiode anode and photodiode cathode 3. n.c. Specifications (25°C) Type Optical Specification CW Output Power PO Peak Wavelength Δ Spectral Width Δλ Emitting Area Wavelength Temperature Coefficient Beam Divergence θ┴×θ║ Polarization Electrical Specification Slope Efficiency ES Threshold Current Ith Operation Current IO Operation Voltage Vf Series Resistance Rd Package Style Absolute Maximum Ratings Reverse Voltage Vr Operating Temperature TO Storage Temperature Tstg RLT98500GOP 500 975±15 ≤ 3.0 50x1 0.3 48x10 TE ≥ 0.7 ≤ 0.15 ≤ 0.85 ≤2 ≤ 0.8 TO5 2.0 10 … 40 -40 … 85 Unit mW nm nm µm nm/°C Deg W/A A A V Ω V °C °C 04.08.2010 rlt985000gop.doc 1 of 3 Package Dimensons TO5 Package (Unit:mm) 04.08.2010 rlt985000gop.doc 2 of 3 Typical Performance Curves Notes 1. Caution! Don't look at the laser beam directly, because it's harmful to eyes. 2. The storage temperature is between –40 and 85 °C. 3. Under normal circumstances, the higher the temperature is, the shorter the life of semiconductor laser will be. It is recommended to use lasers under TEC cooling or in air-conditioned room. 4. To use a laser diode in following sequences...