FYP2010DN

FYP2010DN — Schottky Barrier Rectifier FYP2010DN Schottky Barrier Rectifier Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection August 2009 1.Anode 3.Anode 2. Cathode 123 TO-220 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) IFSM Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics Symbol Parameter RθJC Maximum Thermal Resistance, Junction to Case (per diode) Electrical Characteristics (per diode) Symbol Parameter VFM * Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A IRM * Maximum Instantaneous Reverse Current @ rated VR * Pulse Test: Pulse Width=300μs, Duty Cycle=2% TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Value 100 100 20 150 -65 to +150 Value 1.7 Value 0.77 0.65 0.75 0.1 20 Units V V A A °C Units °C/W Units V mA © 2009 Fairchild Semiconductor Corporation FYP2010DN Rev. B1 1 www.fairchildsemi.com FYP2010DN — Schottky Barrier Rectifier Typical Performance Characteristics 100 Forward Current, IF[A] 10 1 0.1 0.01 0.0 T =125 oC J TJ=75 oC TJ=25 oC 0.5 1.0 1.5 Forward Voltage Drop, VF[V] Figure 1. Typical Forward Voltage Characteristics (per diode) Juntion Capacit...