Silicon Rectifier. 6A05 Datasheet

6A05 Rectifier. Datasheet pdf. Equivalent

Part 6A05
Description Silicon Rectifier
Feature Naina Semiconductor Ltd. Silicon Rectifier, 6.0A Features • Diffused junction • Low cost • Low rever.
Manufacture Naina Semiconductor
Datasheet
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6A05
Naina Semiconductor Ltd.
Silicon Rectifier, 6.0A
Features
Diffused junction
Low cost
Low reverse leakage current
High current capability & low forward voltage drop
Plastic material carrying UL recognition 94V-0
Polarity: Color Band denotes Cathode
Lead free finish
6A05 - 6A10
Thermal and Mechanical Specifications (TA = 250C unless otherwise
specified)
Parameters
Symbol Values Units
Maximum operating junction
temperature range
TJ
-55 to
+150
0C
Maximum storage temperature range TStg
-55 to
+150
0C
Typical thermal resistance junction to
ambient
RθJA
10 0C/W
Approximate weight
W 2.1 g
JEDEC R-6
Electrical Characteristics (TA = 250C unless otherwise specified)
Parameter
Symbol 6A05 6A1 6A2 6A4 6A6 6A8 6A10
Maximum repetitive peak reverse
voltage
VRRM 50 100 200 400 600 800 1000
Maximum RMS voltage
VRMS 35 70 140 280 420 560 700
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000
Maximum average forward output
current @ TA = 500C
IF(AV)
6.0
Peak forward surge current (8.3ms)
single half sine-wave superimposed
on rated load
IFSM
400
Maximum DC forward voltage drop
per element @ 10 A
VF
0.9
Typical junction capacitance
CJ
150
Maximum DC reverse
current at rated DC
blocking voltage
TA = 250C
TA = 1000C
IR
10
100
Units
V
V
V
A
A
V
pF
µA
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com



6A05
Naina Semiconductor Ltd.
6A05 - 6A10
Dimensions in inches and (millimeters)
2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com





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