10A4

Naina Semiconductor Ltd. Silicon Rectifier, 10.0A Features Diffused junction Low cost Low reverse leakage current High current capability & low forward voltage drop Plastic material carrying UL recognition 94V-0 Polarity: Color Band denotes Cathode Lead free finish 10A05 - 10A10 Thermal and Mechanical Specifications (TA = 250C unless otherwise specified) Parameters Symbol Values Units Maximum operating junction temperature range TJ - 55 to + 125 0C Maximum storage temperature range TStg - 55 to + 150 0C Typical thermal resistance junction to ambient RθJA 10 0C/W Approximate weight W 2.1 g JEDEC R-6 Electrical Characteristics (TA = 250C unless otherwise specified) Parameter Symbol 10A05 10A1 Maximum repetitive peak reverse voltage VRRM 50 100 Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output current @ TA = 500C Peak forward surge current (8.3ms) single half sine-wave superimposed on rated load VRMS VDC IF(AV) IFSM 35 70 50 100 Maximum DC forward voltage drop per element @ 10 A VF Typical junction capacitance CJ Maximum DC reverse current at rated DC blocking voltage TA = 250C TA = 1000C IR 10A2 200 140 200 10A4 400 280 400 10 600 1.0 150 10 100 10A6 600 420 600 10A8 800 560 800 10A10 1000 700 1000 Units V V V A A V pF µA 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com Naina Semiconductor Ltd. 10A05 - 10A10 Dimensions in...