FYPF2010DN
FYPF2010DN
Features
• Low forward voltage drop • High frequency properties and switching speed • Guard ring ...
FYPF2010DN
FYPF2010DN
Features
Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection
Applications
Switched mode power supply Freewheeling diodes Polarity protection
1 2 3
TO-220F
1. Anode 2.Cathode 3. Anode
20A
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings (per diode) TC=25°C unless otherwise noted
Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Maximum Average Rectified Current Maximum Forward Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature @ TC = 105°C Value 100 100 20 150 -65 to +150 Units V V A A °C
Thermal Characteristics
Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 2.8 Units °C/W
Electrical Characteristics (per diode) TC=25 °C unless otherwise noted
Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A Maximum Instantaneous Reverse Current (per diode) @ rated VR Min. TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Typ. Max. 0.77 0.65 0.75 mA 0.1 20 Units V
IRM *
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
FYPF2010DN
Typical Characteristics
100
10
Forward Current, I F[A]
10
Reverse Current, IR[mA]
1
T J=125 C
o
1
0.1
TJ=75 C
o
TJ=125 C
0.1
o
TJ=75 C TJ=25 C
o
o
0.01
T J=25 C
o
0.01 0.0
1E-3...
