150NT

Naina Semiconductor Ltd. 150NT Phase Control Thyristors (Stud Type), 150A Features Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Metric thread type available Low thermal resistance Electrical Ratings (TA = 25oC, unless otherwise noted) Parameters Maximum on-state average current 180o sinusoidal conduction @ TJ = 85oC Symbol IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one cycle non-repetitive surge current Maximum I2t for fusing ITSM I2t Maximum repetitive peak on and off-state voltage range Maximum peak on-state voltage (TJ = 25oC, Ipeak = 79A) VRRM, VDRM VTM Maximum holding current @ TJ IH Maximum latching current @TJ IL Maximum rate of rise of turn-on current, VDRM ≤ 600V di/dt Critical rate of rise of off-state voltage TJ = TJ maximum, 100% VDRM TJ = TJ maximum, 67% VDRM dv/dt Maximum gate current required to trigger Maximum gate voltage required to trigger anode supply 6 V resistive load @TJ IGT VGT Values Units 150 A 235 A 5700 163000 400 to 1600 A A2s V 1.8 V 200 mA 400 mA 200 A/µs 200 V/µs 400 150 mA 2.0 V TO-209AB (TO-93) Thermal and Mechanical Specifications (TA = 25oC, unless otherwise noted) Parameters Symbol Maximum operating junction temperature range TJ Maximum storage temperature range TStg Maximum thermal resistance, junction to case Rth(JC) Mounting torque F Approximate weight W Values - 60 to +125 - 60 to +12...