NPT30

Naina Semiconductor Ltd. Press Fit Triac ½”, 30 Amps Features Improved glass passivation for high reliability Exceptional stability at high temperatures Metric thread type available Low thermal resistance NPT30 TO-203/F Electrical Characteristics (TA = 250C unless otherwise specified) Parameter Symbol 200 Maximum repetitive peak reverse voltage (1), VRRM 400 600 RMS on-state current Non-repetitive peak surge on-state current, one cycle Peak gate trigger current IT(RMS) ITSM IGTM Peak gate power dissipation @ IGT ≤ IGTM Average gate power dissipation PGM PG(AV) Peak off-state current (1) Maximum instantaneous forward voltage drop (1) IDRM & IRRM VTM DC holding current (1) Critical rate-of-rise of off-state voltage (1) IH Critical dv/dt Critical rate-of-rise of commutation voltage (1) Commutating dv/dt DC gate trigger current (T2+ Gate +, T2 - Gate -) Quads I and III (T2+ Gate - , T2 - Gate +) Quads II and IV IGT DC gate trigger voltage Gate controlled turn-on time VGT Tgt Part Numbers NPT302 NPT304 NPT306 30 300 12 40 0.75 1.0 2.0 60 200 3 100 150 2.5 3 Units V A A A W W mA V mA V/µsec V/µsec mA V µsec Thermal and Mechanical Specifications (TA = 25oC, unless otherwise noted) Parameters Symbol Maximum operating junction temperature range TJ Maximum storage temperature range Tstg Maximum thermal resistance, junction to case Rθ(J-C) Approximate weight W Values - 40 to +110 - 40 to +150 1.8 15 Units oC oC oC/W g Notes: (1) All values a...