NDD100B

Naina Semiconductor Ltd. Features Diode/Diode Module, 100A Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance NDD100B Voltage Ratings (TA = 25oC, unless otherwise noted) Type number Voltage Code VRRM, Maximum repetitive peak reverse voltage VRSM, Maximum nonrepetitive peak reverse voltage NDD100B 20 40 60 80 100 120 160 (V) 200 400 600 800 1000 1200 1600 (V) 300 500 700 900 1100 1300 1700 VDRM, Maximum repetitive peak off- state voltage (V) 200 400 600 800 1000 1200 1600 IRRM, Maximum reverse leakage current @ TJMAX (mA) 5.0 Electrical Characteristics (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 850C Symbol IF(AV) Maximum average RMS forward current IF(RMS) Maximum non-repetitive surge current Maximum I2t for fusing IFSM I2t Forward voltage drop VFM Isolation voltage VISO Values 100 157 2500 31250 1.35 3000 Units A A A A2s V V Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Symbol Operating junction temperature range Storage temperature Thermal resistance, junction to case TJ Tstg Rth(JC) Mounting torque to heatsink to terminals F Weight W Values -40 to +125 -40 to +125 0.4 4 ± 15% 3 ± 15% 100 Units 0C 0C 0C/W Nm g 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com Naina Semiconductor Ltd. Pa...