NTD106B

Naina Semiconductor Ltd. NTD106B Features Thyristor/Diode Module, 106A Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Voltage Ratings (TA = 25oC, unless otherwise noted) Type number Voltage Code VRRM, Maximum repetitive peak reverse voltage VRSM, Maximum nonrepetitive peak reverse voltage NTD106B 20 40 60 80 100 120 160 (V) 200 400 600 800 1000 1200 1600 (V) 300 500 700 900 1100 1300 1700 VDRM, Maximum repetitive peak off- state voltage (V) 200 400 600 800 1000 1200 1600 IRRM, Maximum reverse leakage current @ TJMAX (mA) 10 Electrical Characteristics (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 850C Maximum average RMS forward current Symbol IT(AV) IT(RMS) Maximum non-repetitive surge current Maximum I2t for fusing ITSM I2t Forward voltage drop Critical rate of rise of on-state current VTM di/dt Critical rate of rise of off-state voltage dv/dt Gate current required to trigger Gate voltage required to trigger Maximum holding current Maximum latching current Isolation voltage IGT VGT IH IL VISO Values 106 166 2250 25300 1.3 150 1000 150 3 200 400 3000 Units A A A A2s V A/µs V/µs mA V mA mA V Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Symbol Operating junction temperature range Storage temperature TJ Tstg Thermal resistance, junction to case Mounting torque to ...