Super Fast Recovery Diode
Naina Semiconductor Ltd.
MUR10005CT thru MUR10020CTR
Features
Super Fast Recovery Diode, 100A
• Dual Diode Construct...
Description
Naina Semiconductor Ltd.
MUR10005CT thru MUR10020CTR
Features
Super Fast Recovery Diode, 100A
Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR10005CT(R)
Repetitive peak reverse voltage
VRRM
50
RMS reverse voltage
VRMS
35
DC blocking voltage
Average forward current Non-repetitive forward surge current, half sine-wave
VDC IF(AV)
IFSM
TC ≤ 140 oC TC = 25 oC
50 100
400
MUR10010CT(R) 100
70 100 100
400
MUR10020CT(R) 200
140 200 100
400
Units V
V V A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol Conditions MUR10005CT(R)
DC forward voltage
VF
IF = 50 A TJ = 25 oC
1.3
DC reverse current
VR = 50 V
IR
TJ = 25 oC VR = 50 V
TJ = 125oC
25 1
Maximum Reverse Recovery Time
IF = 0.5A trr IR = 1.0A
IRR = 0.25A
75
MUR10010CT(R) 1.3 25 1
75
MUR10020CT(R) 1.3 25 1
75
Units V µA mA
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MUR10005CT(R)
Thermal resistance junction to case
RthJ-C
1.0
Operating, storage temperature range
TJ , Tstg
- 40 to +175
MUR10010CT(R) 1.0
- 40 to +175
MUR10020CT(R) 1.0
- 40 to +175
Units oC/W
oC
1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 sales@nainasemi.com www.nainasemi.com
Naina Semiconductor Ltd.
Package Outline
MUR10...
Similar Datasheet