MUR10020CTR

Naina Semiconductor Ltd. MUR10005CT thru MUR10020CTR Features Super Fast Recovery Diode, 100A Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Conditions MUR10005CT(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage Average forward current Non-repetitive forward surge current, half sine-wave VDC IF(AV) IFSM TC ≤ 140 oC TC = 25 oC 50 100 400 MUR10010CT(R) 100 70 100 100 400 MUR10020CT(R) 200 140 200 100 400 Units V V V A A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter Symbol Conditions MUR10005CT(R) DC forward voltage VF IF = 50 A TJ = 25 oC 1.3 DC reverse current VR = 50 V IR TJ = 25 oC VR = 50 V TJ = 125oC 25 1 Maximum Reverse Recovery Time IF = 0.5A trr IR = 1.0A IRR = 0.25A 75 MUR10010CT(R) 1.3 25 1 75 MUR10020CT(R) 1.3 25 1 75 Units V µA mA nS Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Symbol MUR10005CT(R) Thermal resistance junction to case RthJ-C 1.0 Operating, storage temperature range TJ , Tstg - 40 to +175 MUR10010CT(R) 1.0 - 40 to +175 MUR10020CT(R) 1.0 - 40 to +175 Units oC/W oC 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com Naina Semiconductor Ltd. Package Outline MUR10...