| Feature |
Naina Semiconductor Ltd.
MUR10040CT thru MUR10060CTR
Features
Super Fast Recovery Diode, 100A
• Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
RMS reverse voltage
VRMS
DC blocking voltage
VDC
Average forward current
IF(AV)
Non-repetitive forward surge current, half sinewave
IFSM
Conditions
TC ≤ 140 oC TC = 25 oC
MUR10040CT(R) 400 280 400 100
400
MUR10060CT(R) 600 420 . |
